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| Part Number | 2SD1918 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1918 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High fT：fT=80MHz(TYP) ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Excellent linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATING. |
| Features | ONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50uA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 1.5A; IB= 0.1A VCB= 120V; IE= 0 VEB=4V. |
| Part Number | 2SD1918 |
| Manufacturer | Kexin |
| Title | Silicon NPN Transistor |
| Description | SMD Type Silicon NPN Epitaxial 2SD1918 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breakdown voltage.(BVCEO = 160V) Low collector output capacitance.Typ. 20pF at VCB = 10V +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High transition frequency.(fT =. |
| Features | High breakdown voltage.(BVCEO = 160V) Low collector output capacitance.Typ. 20pF at VCB = 10V +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High transition frequency.(fT = 80MHZ) +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Para. |
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| 1 | 2SD1910 |
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| 2 | 2SD1910 |
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| 3 | 2SD1911 |
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| 4 | 2SD1911 |
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| 5 | 2SD1912 |
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| 6 | 2SD1912 |
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| 7 | 2SD1913 |
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| 8 | 2SD1913 |
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| 9 | 2SD1913 |
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| 10 | 2SD1913 |
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Desde 2024. D4U Semiconductor.
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