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| Part Number | 2SD1912 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1912 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SD1912 APPLICATIONS ·Designed for low frequency power amplifier appl. |
| Features | n Voltage IC= 5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 5V hFE. |
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|---|---|---|---|---|
| 1 | 2SD1910 |
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|
| 2 | 2SD1910 |
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NPN Transistor |
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| 3 | 2SD1911 |
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|
| 4 | 2SD1911 |
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NPN Transistor |
|
| 5 | 2SD1913 |
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| 6 | 2SD1913 |
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| 7 | 2SD1913 |
Sanyo Semicon Device |
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|
| 8 | 2SD1913 |
SavantIC |
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|
| 9 | 2SD1913 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD1914 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
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