Part Number | 2SD1910 |
Distributor | Stock | Price | Buy |
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Part Number | 2SD1910 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) . |
Features | tion Voltage IC= 2.5A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 0.3A; VCE= 5V VECF C-E Diode Forward Voltage IF= 3A 2SD1910 MIN TYP. MAX UNIT 600 V 5.0 V 1.5 V 10 μA 50 200 mA 8 2.0 V NOTICE: ISC reserves the rights to make chang. |
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