Part Number | 2SD1913 |
Distributor | Stock | Price | Buy |
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Part Number | 2SD1913 |
Manufacturer | SavantIC |
Title | SILICON POWER TRANSISTOR |
Description | ·With TO-220F package www.datasheet4u.com ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DES. |
Features | emitter breakdown voltage Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA; IE=0 IC=5mA; RBE=? IE=1mA; IC=0 IC=2A ; IB=0.2A IC=0.5A ; VCE=5V VCB=40V;IE=0 VEB=4V;IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=5V IE=0 . |
Part Number | 2SD1913 |
Manufacturer | BLUE ROCKET ELECTRONICS |
Title | Silicon NPN transistor |
Description | TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package. / Features ,,。 Wide ASO, low saturation voltage, high breakdown voltage. / Applications 。 Low frequency power amplifier. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifi. |
Features | ,,。 Wide ASO, low saturation voltage, high breakdown voltage. / Applications 。 Low frequency power amplifier. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range Q 70~140 R 100~200 S 140~280 http://www.fsbrec.com 1/6 2SD1913 Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Para. |
Part Number | 2SD1913 |
Manufacturer | Sanyo Semicon Device |
Title | PNP/NPN Epitaxial Planar Silicon Transistors |
Description | Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications • Package Dimensions unit : mm 2041A [2SB1274/2SD1913] 4.5 2.8 3.5 7.2 16.0 18.1 General power amplifier. Features • • • • • 10. |
Features |
• • • • • 10.0 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. Micaless package facilitating mounting. 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 Specifications ( ):2SB1274 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Curren. |
Part Number | 2SD1913 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1274 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) . |
Features | lector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 5V ICBO Collector Cutoff Current VCB= 40V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V hFE-2 DC Current Gain IC= 3A ; VCE=. |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | 2SD1910 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SD1910 |
INCHANGE |
NPN Transistor | |
3 | 2SD1911 |
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SILICON POWER TRANSISTOR | |
4 | 2SD1911 |
INCHANGE |
NPN Transistor | |
5 | 2SD1912 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
6 | 2SD1912 |
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7 | 2SD1914 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
8 | 2SD1918 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
9 | 2SD1918 |
Rohm |
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10 | 2SD1918 |
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