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2SD1910 |
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| Part Number | 2SD1910 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT... |
| Features |
tion Voltage IC= 2.5A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 0.3A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 3A
2SD1910
MIN TYP. MAX UNIT
600
V
5.0
V
1.5
V
10 μA
50
200 mA
8
2.0
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended f... |
| Document |
 2SD1910 Data Sheet
PDF 210.25KB |
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Desde 2024. D4U Semiconductor.
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