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2SD1918 |
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| Part Number | 2SD1918 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High fT：fT=80MHz(TYP) ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Excellent linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance ... |
| Features |
ONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50uA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 1.5A; IB= 0.1A VCB= 120V; IE= 0 VEB=4V; IC= 0
hFE
DC Current Gain
IC= 0.1A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 5V,f= 30MHz
MIN TYP. MAX UNIT
160
V
160
V... |
| Document |
 2SD1918 Data Sheet
PDF 189.98KB |
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Desde 2024. D4U Semiconductor.
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