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ST2305 |
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| Part Number | ST2305 |
| Manufacturer | Stanson Technology |
| Description | ST2305 The ST2305 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored... |
| Features |
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STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page 1
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www.DataSheet4U.com
P Channel Enchancement Mode MOSFET -3.5A
ST2305
ABSOULTE MAXIMUM RATINGS (Ta = 25¢J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150¢J ) TA=25¢J TA=70¢J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25¢J TA=70¢J Symbol VDSS VGSS ID IDM IS PD TJ TSTG R£c
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| Document |
 ST2305 Data Sheet
PDF 131.53KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ST2300 |
Stanson Technology |
N-Channel Enhancement Mode MOSFET |
|
| 2 | ST2300SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET |
|
| 3 | ST2301 |
Stanson Technology |
P Channel Enchancement Mode MOSFET |
|
| 4 | ST2301A |
Stanson Technology |
P Channel Enhancement Mode MOSFET |
|
| 5 | ST2302 |
Stanson Technology |
N Channel Enchancement Mode MOSFET |
|
| 6 | ST2303 |
Stanson Technology |
P Channel Enchancement Mode MOSFET |
|
| 7 | ST2303SRG |
Stanson Technology |
P-Channel Enhancement Mode MOSFET |
|
| 8 | ST2304 |
Stanson Technology |
N Channel Enchancement Mode MOSFET |
|
| 9 | ST2304SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET |
|
| 10 | ST2305A |
Stanson Technology |
P Channel Enhancement Mode MOSFET |
|
Desde 2024. D4U Semiconductor.
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