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nexperia |
50A high speed trench field-stop IGBT and benefits • Collector current (IC) rated at 50 A • Low conduction and switching losses • Stable and tight parameters for easy parellel operation • Maximum junction temperature of 175 °C • Fully rated as a soft fast reverse recovery diode • RoHS co |
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nexperia |
40A trench field-stop IGBT and benefits • Collector current (IC) rated at 40 A • Low conduction and switching losses • Stable and tight parameters for easy parallel operation • Maximum junction temperature of 175 °C • Fully rated as a soft fast reverse recovery diode • 5 μs sh |
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nexperia |
75A high speed trench field-stop IGBT and benefits • Collector current (IC) rated at 75 A • Low conduction and switching losses • Stable and tight parameters for easy parallel operation • Maximum junction temperature of 175 °C • Fully rated as a soft fast reverse recovery diode • RoHS co |
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Desde 2024. D4U Semiconductor.
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