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NGW50T65H3DFP |
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| Part Number | NGW50T65H3DFP |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power invert. |
| Features |
• Collector current (IC) rated at 50 A • Low conduction and switching losses • Stable and tight parameters for easy parellel operation • Maximum junction temperature of 175 °C • Fully rated as a soft fast reverse recovery diode • RoHS compliant, lead-free plating 3. Applications • Power inverters • Uninterruptible Power Supply (UPS) inverter • Photovoltaic (PV) strings • EV charging • Induction heating • Welding 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCE collector-emitter voltage Tj operating junction temperature Conditions Tj = 25 °C Min Max Unit -. |
| Datasheet |
 NGW50T65H3DFP Data Sheet
PDF 362.61KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NGW40T65M3DFP |
nexperia |
40A trench field-stop IGBT |
|
| 2 | NGW75T65H3DF |
nexperia |
75A high speed trench field-stop IGBT |
|
| 3 | NG-6901 |
PerkinElmer Optoelectronics |
NG 6901 |
|
| 4 | NG4U |
DB Lectro |
Relay |
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| 5 | NG5N |
DBL |
Switching capacity |
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| 6 | NG6901 |
PerkinElmer Optoelectronics |
NG 6901 |
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| 7 | NG80386DX |
Intel |
32-Bit CHMOS Microprocessor |
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| 8 | NG80386SX |
ETC |
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| 9 | NG82925X |
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Express Chipset |
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| 10 | NGA-186 |
ETC |
DC-6000 MHZ / CASCADABLE GAAS HBT MMIC AMPLIFIER |
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Desde 2024. D4U Semiconductor.
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