NGW40T65M3DFP Datasheet. existencias, precio

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NGW40T65M3DFP 40A trench field-stop IGBT

NGW40T65M3DFP

NGW40T65M3DFP
NGW40T65M3DFP NGW40T65M3DFP
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Part Number NGW40T65M3DFP
Manufacturer nexperia (https://www.nexperia.com/)
Description The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a shortcircuit withstand time of 5 μs. This hard-switching 650 V, 40 A IGBT is optimized for high.
Features
• Collector current (IC) rated at 40 A
• Low conduction and switching losses
• Stable and tight parameters for easy parallel operation
• Maximum junction temperature of 175 °C
• Fully rated as a soft fast reverse recovery diode
• 5 μs short circuit withstand time
• RoHS compliant, lead-free plating 3. Applications
• Motor drives for industrail and consumer appliances
• Serve motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufactuing, etc.
• Power inverters
• Uninterruptible Power Supply (UPS) inverter
• Photovoltaic (PV) strings
• EV char.
Datasheet Datasheet NGW40T65M3DFP Data Sheet
PDF 258.70KB
Distributor Stock Price Buy

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