NGW75T65H3DF |
Part Number | NGW75T65H3DF |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 75 A IGBT is optimized for high-voltage, high-frequency industrial power inverte. |
Features |
• Collector current (IC) rated at 75 A • Low conduction and switching losses • Stable and tight parameters for easy parallel operation • Maximum junction temperature of 175 °C • Fully rated as a soft fast reverse recovery diode • RoHS compliant, lead-free plating 3. Applications • Power inverters • Uninterruptible Power Supply (UPS) inverter • Photovoltaic (PV) strings • EV charging • Induction heating • Welding 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VCE collector-emitter voltage Tj = 25 °C Tj operating junction temperature Min Max Unit . |
Datasheet |
NGW75T65H3DF Data Sheet
PDF 256.35KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NGW40T65M3DFP |
nexperia |
40A trench field-stop IGBT | |
2 | NGW50T65H3DFP |
nexperia |
50A high speed trench field-stop IGBT | |
3 | NG-6901 |
PerkinElmer Optoelectronics |
NG 6901 | |
4 | NG4U |
DB Lectro |
Relay | |
5 | NG5N |
DBL |
Switching capacity | |
6 | NG6901 |
PerkinElmer Optoelectronics |
NG 6901 | |
7 | NG80386DX |
Intel |
32-Bit CHMOS Microprocessor | |
8 | NG80386SX |
ETC |
CMOS 32-Bit Microprocessor | |
9 | NG82925X |
Intel |
Express Chipset | |
10 | NGA-186 |
ETC |
DC-6000 MHZ / CASCADABLE GAAS HBT MMIC AMPLIFIER |