YS FR2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	IXFR27N80Q	IXYS Corporation	HiPerFET Power MOSFETs Q-CLASS • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Rated for unclamped Inductive load switching (UIS) rated • Molding epoxies meet UL 94 V-0 flamma
2	FR204	YS	FAST SWITCHING PLASTIC RECTIFIER • High current capability • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • 2.0 ampere operation at TA=55 °C with no thermal runaway • Exceeds environmental standards of
3	IXFR200N10P	IXYS Corporation	PolarTM HiPerFET Power MOSFET z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z Fast recovery intrinsic diode Applications z DC-DC converters z z z z Battery
4	IXFR20N100P	IXYS Corporation	Polar Power MOSFET HiPerFET • Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5 • • • • Weight substrate - High power dissipation - Isolated mounting surface
5	FR205	YS	FAST SWITCHING PLASTIC RECTIFIER • High current capability • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • 2.0 ampere operation at TA=55 °C with no thermal runaway • Exceeds environmental standards of
6	FR203	YS	FAST SWITCHING PLASTIC RECTIFIER • High current capability • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • 2.0 ampere operation at TA=55 °C with no thermal runaway • Exceeds environmental standards of
7	FR206	YS	FAST SWITCHING PLASTIC RECTIFIER • High current capability • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • 2.0 ampere operation at TA=55 °C with no thermal runaway • Exceeds environmental standards of
8	FR207	YS	FAST SWITCHING PLASTIC RECTIFIER • High current capability • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • 2.0 ampere operation at TA=55 °C with no thermal runaway • Exceeds environmental standards of
9	FR2B	TRSYS	SURFACE MOUNT ULTRAFAST RECTIFIER l l l l l l l l For surface mounted applications Low profile package Built-in strain relief Easy pick and place Fast recovery times for high efficiency Plastic package has Underwriters Laboratory SMB/DO-214AA Flammability Classification 94V-O Glass
10	FR2D	TRSYS	SURFACE MOUNT ULTRAFAST RECTIFIER l l l l l l l l For surface mounted applications Low profile package Built-in strain relief Easy pick and place Fast recovery times for high efficiency Plastic package has Underwriters Laboratory SMB/DO-214AA Flammability Classification 94V-O Glass
11	FR2K	TRSYS	SURFACE MOUNT ULTRAFAST RECTIFIER l l l l l l l l For surface mounted applications Low profile package Built-in strain relief Easy pick and place Fast recovery times for high efficiency Plastic package has Underwriters Laboratory SMB/DO-214AA Flammability Classification 94V-O Glass
12	IXFR21N100Q	IXYS Corporation	HiPerFETTM Power MOSFETs • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • Low drain to tab
13	IXFR24N100	IXYS Corporation	HiPerFETTM Power MOSFETs • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<30pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped
14	IXFR24N50	IXYS Corporation	(IXFR24N50 / IXFR26N50) HiPerFET Power MOSFETs W °C °C °C °C V~ g • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<50pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell st
15	IXFR26N50	IXYS Corporation	(IXFR24N50 / IXFR26N50) HiPerFET Power MOSFETs W °C °C °C °C V~ g • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<50pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell st
16	IXFR24N50Q	IXYS Corporation	(IXFR24N50Q / IXFR26N50Q) HiPerFET Power MOSFETs l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped
17	IXFR26N50Q	IXYS Corporation	(IXFR24N50Q / IXFR26N50Q) HiPerFET Power MOSFETs l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped
18	IXFR26N60Q	IXYS Corporation	HiPerFETTM Power MOSFETs • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • Low drain to tab
19	IXFR20N120P	IXYS Corporation	Polar Power MOSFET HiPerFET • Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5 • • • • • substrate - High power dissipation - Isolated mounting surface - 250
20	IXFR20N80P	IXYS Corporation	PolarHV HiPerFET Power MOSFET z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Applications z DC-DC converters z z z z Symbol Test Conditions (TJ = 25°C, unless