IXFR24N100 IXYS Corporation HiPerFETTM Power MOSFETs Datasheet. existencias, precio

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IXFR24N100

IXYS Corporation
IXFR24N100
IXFR24N100 IXFR24N100
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Part Number IXFR24N100
Manufacturer IXYS Corporation
Description Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ISOPLUS247TM 22 A ID25 = (Electrically Isolated Back Surface) Single MOSFET Die RDS(on) = 0.39 W trr £ 250 ns www.D...
Features
• Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Fast intrinsic Rectifier Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control Advantages
• Easy assembly
• Space savings
• High power density 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 Symbol Test Cond...

Document Datasheet IXFR24N100 Data Sheet
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