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IXFR20N80P |
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| Part Number | IXFR20N80P |
| Manufacturer | IXYS Corporation |
| Description | PolarHVTM HiPerFET Power MOSFET IXFC 20N80P IXFR 20N80P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR ... |
| Features |
z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Applications z DC-DC converters
z z z z
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±100 25 1 500 V V nA μA mA mΩ
Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control
Advantages z Easy assem... |
| Document |
 IXFR20N80P Data Sheet
PDF 152.89KB |
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Desde 2024. D4U Semiconductor.
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