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IXFR21N100Q |
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| Part Number | IXFR21N100Q |
| Manufacturer | IXYS Corporation |
| Description | HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet www.DataSheet4U.com IXFR 21N1... |
| Features |
• Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • Low drain to tab capacitance(<30pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Rated for Unclamped Inductive Load Switching (UIS) • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control Advantages • Easy assembly • Space savings • ... |
| Document |
 IXFR21N100Q Data Sheet
PDF 67.52KB |
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