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VBsemi |
N-Channel MOSFET • TrenchFET® power MOSFET • 100 % UIS tested TO-252 APPLICATIONS D • Primary side switch www.VBsemi.com G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage |
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VBsemi |
N-Channel MOSFET • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested TO-220 D Top View GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-S |
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VBsemi |
N-Channel MOSFET • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise no |
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VBsemi |
N-Channel MOSFET D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D G GDS Top View Drain Connected to Tab S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltag |
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Desde 2024. D4U Semiconductor.
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