FB4110Q |
Part Number | FB4110Q |
Manufacturer | VBsemi |
Description | FB4110Q-VB FB4110Q-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration 100 0.0030 180 Single FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested TO-220 D Top View GD S G S N-Channel MOSFET ABSOLUTE MAXIM. |
Features |
• TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested TO-220 D Top View GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °Ca TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage. |
Datasheet |
FB4110Q Data Sheet
PDF 256.77KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FB41N15D |
International Rectifier |
IRFB41N15D | |
2 | FB40-C1000G |
EIC discrete Semiconductors |
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3 | FB40-C1500RG |
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4 | FB423226 |
Chilisin Electronics |
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5 | FB42N20D |
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6 | FB4S |
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7 | FB-10X |
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8 | FB-10Z |
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9 | FB-1X |
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10 | FB-1Z |
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