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110N2 |
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| Part Number | 110N2 |
| Manufacturer | VBsemi |
| Description | 110N2-VB 110N2-VB Datasheet N-Channel 20-V (D-S)175 _C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0045 @ VGS = 4.5 V 20 0.006 @ VGS = 2.5 V ID (A)a 100 90 TO-252 FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D G GDS Top View Drain Connected to Tab S N-Channel MOSFET ABSOLUTE MAXIMUM RA. |
| Features | D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D G GDS Top View Drain Connected to Tab S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TC = 100_C TC = 25_C TA = 25_C VDS VGS ID IDM IS PD TJ, Tstg 20 "15 100 80 200 65 71 8.3b, c - 55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS. |
| Datasheet |
 110N2 Data Sheet
PDF 247.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 110N10F7 |
VBsemi |
N-Channel MOSFET |
|
| 2 | 110N10F7 |
STMicroelectronics |
N-Channel MOSFET |
|
| 3 | 110NS3LL |
STMicroelectronics |
N-channel MOSFET |
|
| 4 | 1100 |
Cherry Semiconductor |
Semi-Custom IC |
|
| 5 | 1100-8-104-01 |
Methode Electronics |
Header Connector |
|
| 6 | 1100-8-1xx-01 |
Methode Electronics |
Header Connector |
|
| 7 | 11016 |
California Micro Devices |
PRN110 |
|
| 8 | 1102B |
VMI |
(1102xB - 1110xB) Single Phase Bridge |
|
| 9 | 1102C |
VMI |
(1102xC - 1110xC) Single Phase Bridge |
|
| 10 | 1102D |
VMI |
(1102xD - 1110xD) Single Phase Bridge |
|
Desde 2024. D4U Semiconductor.
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