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110N10F7 |
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| Part Number | 110N10F7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STL110N10F7 Product summary Order code STL110N10F7 Ma. |
| Features |
PowerFLAT 5x6
Order code
VDS
RDS(on) max.
STL110N10F7
100 V
6 mΩ
• Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 107 A PTOT 136 W D(5, 6, 7, 8) 8 76 5 Applications • Switching applications G(4) Description S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. . |
| Datasheet |
 110N10F7 Data Sheet
PDF 872.47KB |
| Distributor | Stock | Price | Buy |
|---|
110N10F7 |
| Part Number | 110N10F7 |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | 110N10F7-VB 110N10F7-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration TO-220AB 100 0.005 120 Single FEATURES • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material cat. |
| Features |
• ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs). |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 110N2 |
VBsemi |
N-Channel MOSFET |
|
| 2 | 110NS3LL |
STMicroelectronics |
N-channel MOSFET |
|
| 3 | 1100 |
Cherry Semiconductor |
Semi-Custom IC |
|
| 4 | 1100-8-104-01 |
Methode Electronics |
Header Connector |
|
| 5 | 1100-8-1xx-01 |
Methode Electronics |
Header Connector |
|
| 6 | 11016 |
California Micro Devices |
PRN110 |
|
| 7 | 1102B |
VMI |
(1102xB - 1110xB) Single Phase Bridge |
|
| 8 | 1102C |
VMI |
(1102xC - 1110xC) Single Phase Bridge |
|
| 9 | 1102D |
VMI |
(1102xD - 1110xD) Single Phase Bridge |
|
| 10 | 1102E |
VMI |
(1102xE - 1110xE) Single Phase Bridge |
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Desde 2024. D4U Semiconductor.
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