110N10F7 |
Part Number | 110N10F7 |
Manufacturer | VBsemi |
Description | 110N10F7-VB 110N10F7-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration TO-220AB 100 0.005 120 Single FEATURES • Thu... |
Features |
• ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) TC = 25 °C ID TC = 70 °C IDM Avalanche Current Single Avalanche Energy a Maximum Power Dissipation a IAS L = 0.1 mH EAS TC = 25 °C PD TC = 125 °C Operating Junction and Storage Temperature Ran... |
Document |
110N10F7 Data Sheet
PDF 242.17KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 110N10F7 |
STMicroelectronics |
N-Channel MOSFET | |
2 | 110N2 |
VBsemi |
N-Channel MOSFET | |
3 | 110NS3LL |
STMicroelectronics |
N-channel MOSFET | |
4 | 1100 |
Cherry Semiconductor |
Semi-Custom IC | |
5 | 1100-8-104-01 |
Methode Electronics |
Header Connector | |
6 | 1100-8-1xx-01 |
Methode Electronics |
Header Connector | |
7 | 11016 |
California Micro Devices |
PRN110 | |
8 | 1102B |
VMI |
(1102xB - 1110xB) Single Phase Bridge | |
9 | 1102C |
VMI |
(1102xC - 1110xC) Single Phase Bridge | |
10 | 1102D |
VMI |
(1102xD - 1110xD) Single Phase Bridge |