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Toshiba Semiconductor |
POWER GAAS MMIC |
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Toshiba |
Power GaAs MMIC |
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Toshiba |
Microwave Power MMIC Amplifier TMD1925-3 TMD1925-3 Preliminary Suitable for Digital Communications Low Intermodulation Distortion High Power P1dB=34dBm(min) @1.9 to 2.5GHz High Gain G1dB=27dB(min)@1.9 to 2.5GHz ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS DRAIN SUPPLY VO |
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Toshiba |
Microwave Power MMIC Amplifier High Power P1dB=33dBm(TYP.) High Power Added Efficiency ηadd=14%(TYP.) TMD1013-1-431 TMD1013-1-431 High Gain G1dB=25dB(TYP.) Operable Frequency : f=10.0-12.0GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE |
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Toshiba Semiconductor |
MICROWAVE POWER MMIC AMPLIFIER |
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Toshiba Semiconductor |
MICROWAVE POWER MMIC AMPLIFIER n HIGH POWER P1dB=34.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=26.0dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain Supply Voltage Gate Supply Volt |
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Toshiba Semiconductor |
MICROWAVE POWER MMIC AMPLIFIER n HIGH POWER P1dB=33.0dBm at 7.1GHz to 8.5GHz n HIGH GAIN G1dB=28.0dB at 7.1GHz to 8.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage In |
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Toshiba |
Microwave Power GaAs MMIC |
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Toshiba |
Microwave Power MMIC Amplifier n n High Power P1dB=34dBm(TYP.) High Power Added Efficiency ηadd=21%(TYP.) n n TMD5872-2 PRELIMINARY High Gain G1dB=28dB(TYP.) Broadband Operation f=5.8-7.2GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25oC) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOL |
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Toshiba |
Microwave Power MMIC Amplifier n n n Suitable for VSAT, UNII radio applications High Power P1dB=31.7dBm(MIN.) High Power Added Efficiency ηadd=21%(TYP.) n n TMD5872-2-321 High Gain G1dB=26.7dB(MIN.) Broadband Operation f=5.8-6.475GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25 o C) CHARACT |
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Toshiba |
Microwave Power MMIC Amplifier n n Suitable for WLL Suscriber/CPE High Power P1dB=29dBm(min) n n TMD3438-1 High Gain G1dB=29dB(min) High Linearity ABSOLUTE MAXIMUM RATINGS(Ta=25 o C) CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Total Power Dissipation |
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Desde 2024. D4U Semiconductor.
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