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TMD7185-2 |
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| Part Number | TMD7185-2 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD7185-2 FEATURES n HIGH POWER P1dB=33.0dBm at 7.1GHz to 8.5GHz n HIGH GAIN G1dB=28.0dB at 7.1GHz to 8.5GHz n BROAD BAND INTERN... |
| Features |
n HIGH POWER P1dB=33.0dBm at 7.1GHz to 8.5GHz n HIGH GAIN G1dB=28.0dB at 7.1GHz to 8.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage Temperature SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm °C °C RATING 15 -10 10 -30 ∼ +80 -65 ∼ +175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression www.DataSheet4U.com Drain Current Input VSWR 3rd Order Intermodulation Distorti... |
| Document |
 TMD7185-2 Data Sheet
PDF 72.79KB |
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