TMD1925-3 |
Part Number | TMD1925-3 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TMD1925-3 TMD1925-3 Preliminary Suitable for Digital Communications Low Intermodulation Distortion High Pow... |
Features |
TMD1925-3 TMD1925-3
Preliminary
Suitable for Digital Communications
Low Intermodulation Distortion
High Power P1dB=34dBm(min) @1.9 to 2.5GHz High Gain G1dB=27dB(min)@1.9 to 2.5GHz
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER STORAGE TEMPERATURE
( Ta= 25°C )
SYMBOL VDD VGG Pin Tstg UNIT V V dB °C RATINGS 15 -4 13 -65 ∼ +175
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Operating Frequency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Input Return Loss Output Return Loss 3rd Order... |
Document |
TMD1925-3 Data Sheet
PDF 80.26KB |
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