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TMD5872-2-321 |
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| Part Number | TMD5872-2-321 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n n n Suitable for VSAT, UNII radio applications High Power P1dB=31.7dBm(MIN.) High Power Added Efficiency ηadd=21%(TYP.... |
| Features |
n n n Suitable for VSAT, UNII radio applications High Power P1dB=31.7dBm(MIN.) High Power Added Efficiency ηadd=21%(TYP.) n n
TMD5872-2-321
High Gain G1dB=26.7dB(MIN.) Broadband Operation f=5.8-6.475GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25 o C) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER FLANGE TEMPERATURE STORAGE TEMPERATURE SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm
oC oC
RATINGS 15 -10 10 -30 - +80 -65 - +175
RF PERFORMANCE SPECIFICATIONS (Ta=25 o C) CHARACTERISTICS Operaing Frequency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point G... |
| Document |
 TMD5872-2-321 Data Sheet
PDF 113.20KB |
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