Toshiba HN2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	HN2S04FU	Toshiba	Epitaxial Schottky Barrier Type Diode /current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
2	HN2A01FU	Toshiba	Silicon PNP Epitaxial Type Transistor se this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Tos
3	HN2S01F	Toshiba	Silicon Epitaxial Schottky Barrier Type Diode ture/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reli
4	HN2D03F	Toshiba	Silicon Epitaxial Planar Type Diode temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and indivi
5	HN2D01FU	Toshiba	Silicon Epitaxial Planar Type Diode e and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please
6	HN2S02FU	Toshiba	Silicon Epitaxial Schottky Barrier Type Diode s (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Met
7	HN2D01F	Toshiba	Silicon Epitaxial Planar Type Diode to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semicond
8	HN2S02JE	Toshiba	Silicon Epitaxial Schottky Barrier Type Diode nificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handl
9	HN2S01FU	Toshiba	Silicon Epitaxial Schottky Barrier Type Diode ature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual rel
10	HN2C01FU	Toshiba Semiconductor	NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
11	HN2C10FU	Toshiba Semiconductor	NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
12	HN2C11FU	Toshiba Semiconductor	NPN EPITAXIAL PLANAR TYPE TRANSISTOR
13	HN2C12FU	Toshiba Semiconductor	NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
14	HN2V02H	Toshiba Semiconductor	EPITAXIAL PLANAR TYPE (AM RADIO BAND TUNING APPLICATIONS)
15	HN2A26FS	Toshiba Semiconductor	Frequency General-Purpose Amplifier Applications lectrical Characteristics (Ta = 25°C) www.DataSheet4U.com Characteristic Symbol ICBO IEBO hFE(Note) VCE (sat) fT Cob Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 VCE = −6 V, IC = −2 mA IC = −100 mA, IB = −10 mA VCE = −10 V, IC = −1 mA VCB =
16	HN20S01F	Toshiba	Silicon Epitaxial Schottky Barrier Type Diode
17	HN20S01FU	Toshiba	Silicon Epitaxial Schottky Barrier Type Diode
18	HN2E04F	Toshiba	MULTI CHIP DISCRETE DEVICE V 80 V Maximum (peak) forward current IFM 300 mA Average forward current Surge current (10ms) IO IFSM 100 mA 1 A Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector power dissipation Junction temperature Stora
19	HN2D02FU	Toshiba	Silicon Epitaxial Planar Type Diode gh temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the abs
20	HN2S03FU	Toshiba	Silicon Epitaxial Schottky Barrier Type Diode iability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handb