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HN2S02FU |
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| Part Number | HN2S02FU |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02FU High Speed Switching Application HN2S02FU Unit: mm z HN2S02FU is composed of 3 independent diodes. z Low forward voltage: VF (3) = 0.54... |
| Features |
s (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* :This is absolute maximum rating of single diode (Q1 or Q2 or Q3).
In the case of using 2 ro 3 diodes, the absolute maximum ratings
per diodes is 75 % of the single diode one.
** :Total rating
Electrical Characteristics (Q1, Q2, Q3 Common,... |
| Document |
 HN2S02FU Data Sheet
PDF 193.46KB |
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Desde 2024. D4U Semiconductor.
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