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HN2E04F |
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| Part Number | HN2E04F |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | MULTI CHIP DISCRETE DEVICE |
| Features |
V
80
V
Maximum (peak) forward current
IFM
300
mA
Average forward current Surge current (10ms)
IO IFSM
100
mA
1
A
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic Collector power dissipation Junction temperature Storage temperature range
Symbol PC* Tj Tstg
Rating
... |
| Document |
 HN2E04F Data Sheet
PDF 572.15KB |
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Desde 2024. D4U Semiconductor.
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