HN2S01F |
Part Number | HN2S01F |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application HN2S01F Unit: mm z HN2S01F is composed of 3 independent diodes. z Low reverse current: VF =... |
Features |
ture/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : This is absolute maximum rating of single diode (Q1 or Q2 or Q3).
In the case of using 2 ro 3 diodes, the absolute maximum ratings
per diodes is 75 % of the single diode one.
Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C)
Characteristic
Forward voltage... |
Document |
HN2S01F Data Sheet
PDF 227.17KB |
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