| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba |
Silicon PNP Transistor . Designed for Complementary Use with BD135, BD137 and BD139 7.9 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage BD136 BD138 BD140 VCBO Collector-Emitter Voltage BD136 BD138 BD140 Emitter-Base Voltage |
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Toshiba |
SILICON PNP Transistor . Designed for Complementary Use with BD135, BD137 and BD139 7.9 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage BD136 BD138 BD140 VCBO Collector-Emitter Voltage BD136 BD138 BD140 Emitter-Base Voltage |
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Toshiba Semiconductor |
2SD1408 . High Power Dissipation : Pc= ?5W (Tc=25 °C) . Good Linearity of hEE . Complementary to 2SB1017 . Recommended for 20— 25W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collecto |
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Toshiba |
Silicon NPN Transistor . High Collector Current : Ic=30A . High DC Current Gain : hFE=1000(Min. (V C e=5V, Ic=20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm 025.OMAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage C |
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Toshiba Semiconductor |
Silicon NPN Transistor (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) |
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Toshiba |
NPN Transistor . Low Saturation Voltage : VcE(sat)=0.4V(Max. ) . Complementary to 2SB1019 at Ic=4A MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VcBO VCEO VeBO RATING 70 50 UNIT *sJ Ii-t |
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Toshiba |
Silicon NPN Transistor . High DC Current Gain of 200 to 1200 at VC E=5V, I C=0.5A . Low V CE ( sat ) of 1.0V (Max.) at Ic=lA, I B=0.02A . Collector Power Dissipation of 25W at Tc=25 C Unit in mm 10:3 MAX. j -r 7.0 . -rr ^ "/ k 03.2±O.2 s CO V X C5 aH o << • 3 to |
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Toshiba |
Silicon NPN Transistor . High Voltage and High Current : V CEO =50V(Min.), I c =150mA(Max. . Excellent hp£ Linearity : hFE(IC=0.1mA)/hFE (Ic=2mA)=0.95(Typ.) . Low Noise : NF=ld3(Typ. ) at f=lkHz . Complementary to TED1602. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERI |
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Toshiba |
NPN Transistor . High Voltage VCBO=1500V Low Saturation Voltage : V CE (sat)=5V (Max.) (I C =6A, High Speed : tf=1.0^s (Max.) Glass Passivated Collector-Base Junction I B=1.2A) Unit in nun 1&0MAX. 03.6 ±0.2 I- ' MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL R |
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Toshiba |
NPN Transistor . High Voltage : VCBo=1500V . Low Saturation Voltage : VC E(sat)=5V(Typ.) (I C=3A, I B=0.8A) . High Speed : tf=1.0As(Max. ) (I CP=3A, Ifil (end)=0. 8A) . Built-in Damper Type . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. ^3.6x0.2 MA |
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Toshiba |
NPN Transistor . Low Saturation Voltage : vCE(sat)=0.5V(Max.) . Complementary to 2SB1018 at I C=4A Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 Collector-Emitter Voltage Emitter-Base Voltage Collec |
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Toshiba |
SILICON CONTROLLED RECTIFIER |
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Toshiba Semiconductor |
MICROWAVE POWER MMIC AMPLIFIER n HIGH POWER P1dB=34.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=26.0dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain Supply Voltage Gate Supply Volt |
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Toshiba Semiconductor |
Silicon NPN Transistor . High Power Dissipation : Pc= ?5W (Tc=25 °C) . Good Linearity of hEE . Complementary to 2SB1017 . Recommended for 20— 25W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collecto |
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Toshiba |
2SD1405 . High DC Current Gain of 200 to 1200 at VC E=5V, I C=0.5A . Low V CE ( sat ) of 1.0V (Max.) at Ic=lA, I B=0.02A . Collector Power Dissipation of 25W at Tc=25 C Unit in mm 10:3 MAX. j -r 7.0 . -rr ^ "/ k 03.2±O.2 s CO V X C5 aH o << • 3 to |
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Toshiba Semiconductor |
2SD1410A |
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Toshiba |
Silicon NPN Transistor . High Voltage : VCBO=1500V . Low Saturation Voltage : VcE(sat)=4V (Typ.) . High Speed : tf=0.5/is (Typ.) . Glass Passivated Collector-Base Junction Unit in mm 1S0MAX. 03.6 ±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT C |
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Toshiba |
2SD1412A |
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Toshiba |
NPN Transistor . High Voltage : VCBO=1500V . Low Saturation Voltage . High Speed : v CE(sat)=5V (Max.) (I C =5A, : tf=1.0^s (Max.) . Glass Passivated Collector-Base Junction I B=1A) Unit in ram 1S0MAX. 03.6±CL2 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Colle |
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Toshiba |
NPN Transistor . High Voltage : VCBo=1500V . Low Saturation Voltage . High Speed : vCE(sat)=5V(Max.) (I C=4A, I B=0.8A) : tf=l . 0As(Max. . Glass Passivated Collector-Base Junction Unit in mm 160MAX. 03.6 ±0.2 1.5 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC S |
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Desde 2024. D4U Semiconductor.
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