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2SD1460 |
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| Part Number | 2SD1460 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | :) SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . High Collector Current : Ic=30A . High DC Current Gain : hFE=1000(Min. (V C e=5V, Ic=20A) . Mono... |
| Features |
. High Collector Current : Ic=30A . High DC Current Gain : hFE=1000(Min. (V C e=5V, Ic=20A) . Monolithic Construction with Built-in Base-Emitter
Shunt Resistor.
Unit in mm
025.OMAX.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage
SYMBOL v CBO VCEO
RATING 100 100
UNIT V
Emitter-Base Voltage
VEBO
Collector Current
ic 30
Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature
Storage Temperature Range
EQUIVALENT CIRCUIT
IB PC
L stg
200
150
-65-150
COLLECTOR
1. BASE 2. EMITTER
COLLECTOR (CASE)
TO-3
TOSHIBA
TC-3 , TB-3 2-21A... |
| Document |
 2SD1460 Data Sheet
PDF 92.60KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1466 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1468 |
SeCoS |
NPN Transistor |
|
| 3 | 2SD1468S |
Rohm |
MEDIUM POWER TRANSISTOR |
|
| 4 | 2SD1468S |
SeCoS |
NPN Transistor |
|
| 5 | 2SD1400 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1401 |
Sanyo Semicon Device |
NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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