Toshiba 2SJ Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SJ115	Toshiba	SILICON P-CHANNEL MOS FET . High Breakdown Voltage : VDS S=-160V . High Forward Transfer Admitt ance : lYf s l=2.0S (Typ.) . Complementary to 2SK405 Unit in mm 15.9MAX. 03.2±O.2 . o /o m /"«— J \ w Q o - X< yS ^ — -H oo jl rf. ? i i 2.C ±a3 os IO 1-1
2	J509	Toshiba	2SJ509 eristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch−a) 138 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = −50 V, Tch = 25°C (initial), L = 168 mH, RG
3	2SJ537	Toshiba Semiconductor	Silicon P-Channel MOSFET oduct to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semic
4	2SJ103	Toshiba Semiconductor	P-Channel MOSFET = 0, IG = 100 mA VDS = -10 V, VGS = 0 VDS = -10 V, ID = -0.1 mA VDS = -10 V, VGS = 0, f = 1 kHz VDS = -10 mV, VGS = 0, IDSS = -5 mA VDS = -10 V, VGS = 0, f = 1 MHz VDG = -10 V, ID = 0, f = 1 MHz Min ¾ 50 -1.2 0.3 1.0 ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ 4.0 270 18 3.6
5	2SJ200	Toshiba Semiconductor	P-Channel MOSFET lease design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc
6	J239	Toshiba	2SJ239
7	2SJ111	Toshiba	Silicon P-Channel Transistor . Recommended for First Stages of EQ Amplifier and MC Head Amplifiers. . High lY fs l : \|Yf s ]=40mS(Typ.) (VDS =-10V, VGS =0, I D SS=-5mA) . Low Noise : NF=1. OdB(Typ. (VDS =-10V, I D=-5mA, f=lkHz, Rg =100Q) . High Input Impedance : lGSS=lnA(Max. )
8	2SJ313	Toshiba Semiconductor	P-Channel MOSFET eviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-09-29 Electrical Characteristics (T
9	2SJ334	Toshiba Semiconductor	P-Channel MOSFET nuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
10	2SJ338	Toshiba Semiconductor	P-Channel MOSFET tance Input capacitance Output capacitance Reverse transfer capacitance IGSS V (BR) DSS V GS (OFF) VDS (ON) \|Yfs\| Ciss Coss Qrss VDS = 0, VGS = ±20 V ID = −10 mA, VGS = 0 VDS = −10 V, ID = −10 mA ID = −0.6 A, VGS = −10 V VDS = −10 V, ID = −0.3 A VD
11	2SJ377	Toshiba Semiconductor	P-Channel MOSFET 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.
12	J508	Toshiba	2SJ508 .) Thermal Characteristics Characteristics Symbol Max Unit Marking Thermal resistance, channel to ambient Rth (ch−a) 250 °C / W ZE Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceram
13	2SJ512	Toshiba Semiconductor	Silicon P-Channel MOSFET mbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 4.16 62.5 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = −50 V, Tch
14	J516	Toshiba Semiconductor	2SJ516 under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperat
15	2SJ105	Toshiba Semiconductor	P-Channel MOSFET Note) VDS = -10 V, VGS = 0 VGS (OFF) VDS = -10 V, ID = -0.1 mA ïYfsï VDS = -10 V, VGS = 0, f = 1 kHz RDS (ON) Ciss Crss VDS = -10 mV, VGS = 0 IDSS = -5 mA VDS = -10 V, VGS = 0, f = 1 MHz VDG = -10 V, ID = 0, f = 1 MHz Note: IDSS classification
16	2SJ106	Toshiba Semiconductor	P-Channel MOSFET iability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC TO-236MOD JEITA S
17	2SJ108	Toshiba Semiconductor	P-Channel MOSFET GSS VGS = 25 V, VDS = 0 V (BR) GDS VDS = 0, IG = 100 mA IDSS (Note) VDS = -10 V, VGS = 0 VGS (OFF) ïYfsï Ciss Crss NF (1) VDS = -10 V, ID = -0.1 mA VDS = -10 V, VGS = 0, f = 1 kHz VDS = -10 V, VGS = 0, f = 1 MHz VGD = 10 V, ID = 0, f = 1 MHz VD
18	2SJ109	Toshiba Semiconductor	P-Channel MOSFET
19	2SJ144	Toshiba Semiconductor	P-Channel MOSFET te reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA SC-
20	2SJ148	Toshiba Semiconductor	P-Channel MOSFET tions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and