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2SJ108 |
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| Part Number | 2SJ108 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 2SJ108 Low Noise Audio Amplifier Applications Unit: mm · Recommended for first stages of EQ amplifiers and MC head amplifiers. · High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = −10 V, VGS = 0, IDSS = −3 mA) · Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = −10 V, ID = −1 mA, f = 1 kHz) · High inp. |
| Features | GSS VGS = 25 V, VDS = 0 V (BR) GDS VDS = 0, IG = 100 mA IDSS (Note) VDS = -10 V, VGS = 0 VGS (OFF) ïYfsï Ciss Crss NF (1) VDS = -10 V, ID = -0.1 mA VDS = -10 V, VGS = 0, f = 1 kHz VDS = -10 V, VGS = 0, f = 1 MHz VGD = 10 V, ID = 0, f = 1 MHz VDS = -10 V, ID = -1 mA, RG = 1 kW, f = 10 Hz NF (2) VDS = -10 V, ID = -1 mA, RG = 1 kW, f = 1 kHz Note: IDSS classification GR: -2.6~-6.5 mA, BL: -6.0~-12 mA, V: -10~-20 mA Min Typ. Max Unit ¾ ¾ 1.0 nA 25 ¾ ¾ V -2.6 ¾ -20 mA 0.15 ¾ 2.0 V 8 22 ¾ mS ¾ 105 ¾ pF ¾ 32 ¾ pF ¾ 1.0 10 dB ¾ 0.5 2 1 2003-03-25 2SJ108 2 2003-03-25 2SJ108 3. |
| Datasheet |
 2SJ108 Data Sheet
PDF 178.39KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ103 |
Toshiba Semiconductor |
P-Channel MOSFET |
|
| 2 | 2SJ104 |
Toshiba Semiconductor |
P-Channel MOSFET |
|
| 3 | 2SJ105 |
Toshiba Semiconductor |
P-Channel MOSFET |
|
| 4 | 2SJ106 |
Toshiba Semiconductor |
P-Channel MOSFET |
|
| 5 | 2SJ107 |
Toshiba Semiconductor |
P-Channel MOSFET |
|
| 6 | 2SJ109 |
Toshiba Semiconductor |
P-Channel MOSFET |
|
| 7 | 2SJ111 |
Toshiba |
Silicon P-Channel Transistor |
|
| 8 | 2SJ112 |
ETC |
MOSFET |
|
| 9 | 2SJ113 |
Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET |
|
| 10 | 2SJ114 |
Hitachi Semiconductor |
HIGH FREQUENCY POWER AMPLIFIER |
|
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