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2SJ111 |
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| Part Number | 2SJ111 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | SILICON f CHANNEL JUNCTION TYPE 2SJ111 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS. FEATURES . Recommended for First Stages of EQ Amplifier and MC Head Amplifiers. . High lY fs l : |Yf s ]=40mS(Typ.) (VDS =-10V, VGS =0, I D SS=-5mA) . Low Noise : NF=1. OdB(Typ. (VDS =-10V, I D=-5mA, f=lkHz, Rg =100Q) . High Input Impedance : lGSS=lnA(Max. ) (Vdg=-25V) . Com. |
| Features | . Recommended for First Stages of EQ Amplifier and MC Head Amplifiers. . High lY fs l : |Yf s ]=40mS(Typ.) (VDS =-10V, VGS =0, I D SS=-5mA) . Low Noise : NF=1. OdB(Typ. (VDS =-10V, I D=-5mA, f=lkHz, Rg =100Q) . High Input Impedance : lGSS=lnA(Max. ) (Vdg=-25V) . Complementary to 2SK369 Unit in mm 51 MAX . 1.27 1.27 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range VGDS IG PD r stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Gate-Source Cut-off Current IGSS. |
| Datasheet |
 2SJ111 Data Sheet
PDF 108.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ112 |
ETC |
MOSFET |
|
| 2 | 2SJ113 |
Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET |
|
| 3 | 2SJ114 |
Hitachi Semiconductor |
HIGH FREQUENCY POWER AMPLIFIER |
|
| 4 | 2SJ115 |
ETC |
SILICON P-CHANNEL MOS FET |
|
| 5 | 2SJ115 |
Toshiba |
SILICON P-CHANNEL MOS FET |
|
| 6 | 2SJ116 |
Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET |
|
| 7 | 2SJ117 |
Hitachi Semiconductor |
P-Channel MOSFET |
|
| 8 | 2SJ118 |
ETC |
(2SJ118 / 2SJ119) SILICON P-CHANNEL MOS FET |
|
| 9 | 2SJ119 |
ETC |
(2SJ118 / 2SJ119) SILICON P-CHANNEL MOS FET |
|
| 10 | 2SJ103 |
Toshiba Semiconductor |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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