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2SJ334 |
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| Part Number | 2SJ334 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance : |Yfs| = 23 S (typ.) z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) z Enhancement. |
| Features | nuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Character. |
| Datasheet |
 2SJ334 Data Sheet
PDF 421.83KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ330 |
NEC |
P-Channel MOSFET |
|
| 2 | 2SJ331 |
NEC |
P-Channel MOSFET |
|
| 3 | 2SJ332 |
Renesas Technology |
Silicon P-Channel MOS FET |
|
| 4 | 2SJ333 |
VBsemi |
P-Channel 30V MOSFET |
|
| 5 | 2SJ337 |
Sanyo Semicon Device |
P-Channel MOSFET |
|
| 6 | 2SJ338 |
Toshiba Semiconductor |
P-Channel MOSFET |
|
| 7 | 2SJ339 |
Sanyo Semicon Device |
P-Channel MOSFET |
|
| 8 | 2SJ302 |
NEC |
P-Channel MOSFET |
|
| 9 | 2SJ302-Z |
NEC |
SWITCHING P-CHANNEL POWER MOSFET |
|
| 10 | 2SJ302-ZJ |
Kexin |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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