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TRANSYS Electronics |
Plastic-Encapsulated Transistors Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdo |
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TRANSYS |
Transistors Power dissipation PCM: 0.5 W (Tamb=25℃) TRANSISTOR (PNP) SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Collector current -1 A ICM: Collector-base voltage V V(BR)CBO: -40 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECT |
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TRANSYS |
Plastic-Encapsulated Transistors Power dissipation PCM: 200 mW (Tamb=25℃) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 Collector current ICM: -800 mA Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 0. 025 0. 95¡ À |
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TRANSYS |
PNP Transistor Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.7 Collector-base voltage A V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 2. 80¡ À0. 05 1 |
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TRANSYS Electronics |
PNP Transistor Power dissipation PCM: TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 1. 01 R EF w.DataSheet4U.com 150 mW (Tamb=25℃) 2. 30¡ À0. 05 Collector current -100 mA ICM: Collector-base voltage -45 V V(BR)CBO: Operating and storage junct |
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TRANSYS |
Plastic-Encapsulated Transistors Power dissipation PCM: 0.5 Collector current -2 ICM: Collector-base voltage V(BR)CBO: -40 W (Tamb=25℃) A 1 2. COLLECTOR 2 3. EMITTER 3 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 |
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TRANSYS |
Plastic-Encapsulated Transistors Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TRANSISTOR (PNP) SOT-89 1. BASE 0.5 -3 -30 W (Tamb=25℃) A V 2. COLLECTOR 1 3. EMITTER 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ E |
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TRANSYS |
Plastic-Encapsulated Transistors Power dissipation PCM: 1 W (Tamb=25℃) TRANSISTOR (PNP) TO-92 1. EMITTER 2. COLLECTOR Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 3. BASE 1 2 3 ELECT |
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TRANSYS |
Plastic-Encapsulate Transistors Power dissipation PCM: 600 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current -3 A ICM: Collector-base voltage -20 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELE |
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TRANSYS |
Plastic-Encapsulated Transistors Power dissipation PCM: 500 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current -1 A ICM: Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELEC |
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TRANSYS Electronics Limited |
Plastic-Encapsulate Transistors Power dissipation www.DataSheet4U.com TRANSISTOR (PNP) TO-252 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ |
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TRANSYS |
Plastic-Encapsulated Transistors Power dissipation PCM: TRANSISTOR (PNP) 3. COLLECTOR 0.2 W (Tamb=25℃) 0. 95 1. 0 2. 4 1. 3 Collector current -0.2 A ICM: Collector-base voltage -45 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. |
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TRANSYS |
Plastic-Encapsulated Transistors Power dissipation PCM: 500 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current -1 A ICM: Collector current (Pulse) ICP: -2 A Collector-base voltage -25 V V(BR)CBO: Operating and storage junction temperature |
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Desde 2024. D4U Semiconductor.
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