2SB1197K |
Part Number | 2SB1197K |
Manufacturer | TRANSYS |
Description | Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SB1197K TRANSISTOR (PNP) FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. ... |
Features |
Power dissipation PCM: 200 mW (Tamb=25℃)
SOT-23-3L
1. BASE 2. EMITTER 3. COLLECTOR
1. 02
Collector current ICM: -800 mA Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
0. 025 0. 95¡ À
2. 80¡ À 0. 05 1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(... |
Document |
2SB1197K Data Sheet
PDF 85.66KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SB1197 |
WEITRON |
PNP Transistor | |
2 | 2SB1197 |
GME |
Silicon Epitaxial Planar Transistor | |
3 | 2SB1197 |
MCC |
PNP Transistor | |
4 | 2SB1197 |
Galaxy Semi-Conductor |
Silicon Epitaxial Planar Transistor | |
5 | 2SB1197 |
SeCoS |
PNP Transistor | |
6 | 2SB1197 |
Jin Yu Semiconductor |
TRANSISTOR |