South Sea Semiconductor SSS Hoja de datos

No.	parte #	Fabricante	Descripción
1	SSS8205	South Sea Semiconductor	Dual N-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount package. PB Free. G1(6) S1(1) G2(4) S2(3) Marking Code 8205 o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source
2	SSS2309	South Sea Semiconductor	P-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o
3	SSS2321	South Sea Semiconductor	P-Channel MOSFET ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable. ȟ!SOT-23 package. ȟ!Pb Free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 1
4	SSS2323	South Sea Semiconductor	P-Channel MOSFET Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free. o G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C
5	SSS3401	South Sea Semiconductor	P-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o
6	SSS3403	South Sea Semiconductor	P-Channel MOSFET Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pu
7	SSS5N20	South Sea Semiconductor	Dual N-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount package. G1(6) S1(1) G2(4) S2(3) ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
8	SSS2302	South Sea Semiconductor	N-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb Free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Puls
9	SSS2308	South Sea Semiconductor	N-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o
10	SSS3400	South Sea Semiconductor	N-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o
11	SSS3402	South Sea Semiconductor	N-Channel MOSFET Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free. o G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ Ta -Pulsed
12	SSS2301A	South Sea Semiconductor	P-Channel MOSFET Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pu