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SSS2321 |
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| Part Number | SSS2321 |
| Manufacturer | South Sea Semiconductor |
| Description | SSS2321 P-Channel Enhancement Mode MOSFET SOT-23 D Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 60 @VGS = -4.5V G 21 23 YW -20V -3.4A 80 @VGS = -2.5V 125 @VGS = -1.8V S D FEATURES ȟ!Super ... |
| Features |
ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable. ȟ!SOT-23 package. ȟ!Pb Free.
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
-20 + -8 -3.4 -12 -0.74 0.89 -55 to 150
Unit
V V A A A W
o
Drain-Source Diode Forward Current Maximum Power Dissipation
a
IS PD TJ, TSTG
Operating Junction and Storage Temperature Range
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
RįJA
115
o
C/W
South Sea Semicond... |
| Document |
 SSS2321 Data Sheet
PDF 52.55KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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