SSS8205 |
Part Number | SSS8205 |
Manufacturer | South Sea Semiconductor |
Description | SSS8205 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) 18V ID (A) 5A RDS(ON) (m ) Max 25 @VGS = 4.5V 45 @VGS = 2.5V D1 (2, 5) 1 TSOP-6 (SOT-23-6) 82 05 YW D2 (2, 5) FEATURES Super... |
Features |
Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount package. PB Free.
G1(6) S1(1)
G2(4) S2(3)
Marking Code
8205
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed
b o
Symbol
VDS VGS ID IDM
a
Limit
18 + - 10 5 25 2 1.25 -55 to 150
Unit
V V A A A W
o
Drain-Source Diode Forward Current Maximum Power Dissipation
a
IS PD TJ, TSTG
Operating Junction and Storage Temperature Range
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
R
JA
... |
Document |
SSS8205 Data Sheet
PDF 208.25KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SSS8504AL |
Silikron |
MOSFET | |
2 | SSS8504DL |
Silikron |
MOSFET | |
3 | SSS8N60 |
Tuofeng Semiconductor |
N-CHANNEL MOSFET | |
4 | SSS1004 |
Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors | |
5 | SSS1004 |
GOOD-ARK |
N-Channel MOSFET | |
6 | SSS1004A7 |
Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors |