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SSS2309 |
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| Part Number | SSS2309 |
| Manufacturer | South Sea Semiconductor |
| Description | SSS2309 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 130 @VGS = -4.5V -20V -2.3A 190 @VGS = -2.5V G S D SOT-23 D FEATURES Super high dense cell design for low R... |
| Features |
Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package.
S G
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
-20 + - 10 -2.3 -8 -1.25 1.25 -55 to 150
Unit
V V A A A W
o
Drain-Source Diode Forward Current Maximum Power Dissipation
a
IS PD TJ, TSTG
Operating Junction and Storage Temperature Range
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
R
JA
100
o
C/W
South Sea Semiconductor reserves th... |
| Document |
 SSS2309 Data Sheet
PDF 76.90KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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