Sirectifier Semiconductors SII Hoja de datos

No.	parte #	Fabricante	Descripción
1	SII145S12	Sirectifier Semiconductors	SPT IGBT Modules on) VCC = 600V, IC = 100A tr RGon = RGoff = 9 , Tj = 125oC td(off) VGE = ± 15V tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 100A; Tj = 125oC Qrr d
2	SII400N12	Sirectifier Semiconductors	NPT IGBT Modules ions: VF = VEC IF = 300A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 300A; Tj = 25(125)oC Qrr di/dt = 2000A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanical Dat
3	SII400S12	Sirectifier Semiconductors	SPT IGBT Modules tions: VF = VEC IF = 300A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 300A; Tj = 125oC Qrr di/dt = 2400A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanica
4	SII50N06	Sirectifier Semiconductors	NPT IGBT Modules o www.DataSheet4U.com Isc tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: td(on) VCC = 300V, IC = 50A tr RGon = RGoff =2.7 , , Tj = 25(125)oC td(off) VGE = ± 15V tf 40(42) 9(10) 120(130) 12(21) 0.5(1.0) 1.2 0.44 ns ns ns ns
5	SII75S12	Sirectifier Semiconductors	SPT IGBT : VF = VEC IF = 50A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 50A; Tj = 125oC Qrr di/dt = 2100A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanical Data
6	SII300N06	Sirectifier Semiconductors	NPT IGBT Modules heet4U.com Isc tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: td(on) VCC = 300V, IC = 300A tr RGon = RGoff =3.3 , , Tj = 25(125)oC td(off) VGE = ± 15V tf 95(105) 69(71) 320(355) 42(47) 6.5(11) 0.6 0.1 ns ns ns ns mJ m K/W E
7	SII300S12	Sirectifier Semiconductors	SPT IGBT Modules VCC = 600V, IC = 200A tr RGon = RGoff = 5 , Tj = 125oC td(off) VGE = ± 15V tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF =200A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 200A; Tj = 125oC Qrr di/dt
8	SII200N06	Sirectifier Semiconductors	NPT IGBT Modules et4U.com Isc tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: td(on) VCC = 300V, IC = 200A tr RGon = RGoff =1.5 , , Tj = 25(125)oC td(off) VGE = ± 15V tf 163(180) 43(49) 253(285) 33(41) 4.6(6.3) 0.9 0.17 ns ns ns ns mJ m K/W
9	SII200N12	Sirectifier Semiconductors	NPT IGBT di/dt=_ 2000A/us,Tj = 125oC _ IF = 200A, VGE = 0V, VR= 600V Qrr _ di/dt= 2000A/us, Tj = 25(125)oC Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 3(12) 2.5(3.1) 13 2 1 108 max. 6.5 4 400 3(3.7) U
10	SII75N06	Sirectifier Semiconductors	NPT IGBT Isc tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: td(on) VCC = 300V, IC = 75A tr RGon = RGoff =3.0 , , Tj = 25(125)oC td(off) VGE = ± 15V tf 63(65) 22(25) 155(170) 20(35) 0.7(2.4) 1.2 0.35 ns ns ns ns mJ m K/W Eon(Eoff) RC
11	SII300N12	Sirectifier Semiconductors	NPT IGBT Modules 10uS, VGE 15V, Tvj = 125 C , Vcc = 900V under following conditions: VCE = 600V, IC = 300A RGon = RGoff =3.3 , , Tj = 25(125)oC VGE = ± 15V www.DataSheet4U.com QG VGE = -15V...+15V td(on) tr td(off) tf Eon(Eoff) 110(120) 60(70) 550(570) 70(80) 35(
12	SII100N12	Sirectifier Semiconductors	NPT IGBT Modules i/dt=_ 1000A/us,Tj = 125oC _ IF = 100A, VGE = 0V, VR= 600V Qrr _ di/dt= 1000A/us, Tj = 25(125)oC Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 1.5(6) 2.5(3.1) 6.5 1 0.5 54 max. 6.5 2 400 3(3.7)
13	SII100S12	Sirectifier Semiconductors	SPT IGBT Modules ons: VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 75A; Tj = 125oC Qrr di/dt = 3100A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanical Da
14	SII150N06	Sirectifier Semiconductors	NPT IGBT Modules t4U.com Isc tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: td(on) VCC = 300V, IC = 150A tr RGon = RGoff =1.5 , , Tj = 25(125)oC td(off) VGE = ± 15V tf 115(125) 28(30) 200(225) 25(35) 2.3(4.6) 1.0 0.21 ns ns ns ns mJ m K/W E
15	SII150S12	Sirectifier Semiconductors	SPT IGBT Modules itions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 100A; Tj = 125oC Qrr di/dt = 3600A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanic
16	SII200S12	Sirectifier Semiconductors	SPT IGBT Modules itions: VF = VEC IF = 150A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 150A; Tj = 125oC Qrr di/dt = 4800A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanic
17	SII50N12	Sirectifier Semiconductors	NPT IGBT Modules A/us, Tj = 125oC _ IF = 50A, VGE = 0V, VR= 600V Qrr _ di/dt= 800A/us, Tj = 25(125)oC Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 0.8(3.5) 2.5(3.1) 3.3 0.5 0.25 23 max. 6.5 1 200 3(3.7) Units
18	SII75N12	Sirectifier Semiconductors	NPT IGBT 0A/us, Tj = 125oC _ IF = 75A, VGE = 0V, VR= 600V Qrr _ di/dt= 900A/us, Tj = 25(125)oC Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 1(4.5) 2.5(3.1) 5.5 0.8 0.3 31 max. 6.5 1.5 320 3(3.7) Units
19	SII100N06	Sirectifier Semiconductors	NPT IGBT U.com Isc tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: td(on) VCC = 300V, IC = 100A tr RGon = RGoff =2.2 , , Tj = 25(125)oC td(off) VGE = ± 15V tf 25(26) 10(11) 130(150) 20(30) 1.0(2.9) 1.0 0.28 ns ns ns ns mJ m K/W Eon(E
20	SII150N12	Sirectifier Semiconductors	NPT IGBT Modules i/dt=_ 1500A/us,Tj = 125oC _ IF = 150A, VGE = 0V, VR= 600V Qrr _ di/dt= 1500A/us, Tj = 25(125)oC Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 2(8) 2.5(3.1) 11 1.6 0.6 62 max. 6.5 2.8 320 3(3.7)