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SII200S12 |
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| Part Number | SII200S12 |
| Manufacturer | Sirectifier Semiconductors |
| Description | SII200S12 SPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Valu... |
| Features |
itions: VF = VEC IF = 150A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 150A; Tj = 125oC Qrr di/dt = 4800A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanical Data Ms to heatsink M6 Mt to terminals M6 w TC = 25oC, unless otherwise specified min. 4.8 typ. max. Units V mA V m V nF 20 0.35(0.5) 125 50 620 55 18(15) 2(1.8) 1.1 6 190 24 8 0.095 0.25 0.038 3 2.5 5 5 325 2.5 1.2 8.7 nH m ns ns ns ns mJ V V m A uC mJ K/W K/W K/W Nm Nm g
5.5 6.45 0.2 0.6 1(0.9) 1.15(1.05) 6(8) 8(10) 1.9(2.1) 2.35(2.55) 13 2 2... |
| Document |
 SII200S12 Data Sheet
PDF 488.56KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SII200N06 |
Sirectifier Semiconductors |
NPT IGBT Modules |
|
| 2 | SII200N12 |
Sirectifier Semiconductors |
NPT IGBT |
|
| 3 | SII0680A |
Silicon image |
PCI to IDE/ATA |
|
| 4 | SII100N06 |
Sirectifier Semiconductors |
NPT IGBT |
|
| 5 | SII100N12 |
Sirectifier Semiconductors |
NPT IGBT Modules |
|
| 6 | SII100S12 |
Sirectifier Semiconductors |
SPT IGBT Modules |
|
Desde 2024. D4U Semiconductor.
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