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SII100N12 |
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| Part Number | SII100N12 |
| Manufacturer | Sirectifier Semiconductors |
| Description | SII100N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol RthJC RthJCD o TC = 25oC, unless otherwise spe... |
| Features |
i/dt=_ 1000A/us,Tj = 125oC _ IF = 100A, VGE = 0V, VR= 600V Qrr _ di/dt= 1000A/us, Tj = 25(125)oC Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 1.5(6) 2.5(3.1) 6.5 1 0.5
54
max. 6.5 2 400 3(3.7)
Units V mA nA V
nF S
130 80 400 70 2.3(1.8) 0.3 4(14)
260 160 600 100 2.8
ns
V us uC
Mechanical Data 5 5 160 Nm Nm g
Sirectifier
R
SII100N12
NPT IGBT Modules
Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C
750 W 650 Ptot 600 550
100 µs
Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3
t = 16.0µs p
A IC... |
| Document |
 SII100N12 Data Sheet
PDF 773.81KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | SII100N06 |
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| 2 | SII100S12 |
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| 3 | SII1151 |
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| 4 | SII1160 |
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| 5 | SII1161 |
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| 6 | SII1162 |
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