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SII50N12 |
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| Part Number | SII50N12 |
| Manufacturer | Sirectifier Semiconductors |
| Description | SII50N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol RthJC RthJCD o TC = 25oC, unless otherwise spec... |
| Features |
A/us, Tj = 125oC _ IF = 50A, VGE = 0V, VR= 600V Qrr _ di/dt= 800A/us, Tj = 25(125)oC Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 0.8(3.5) 2.5(3.1) 3.3 0.5 0.25
23
max. 6.5 1 200 3(3.7)
Units V mA nA V
nF S
44 56 380 70 2.3(1.8) 0.2 2.8(8)
100 100 500 100 2.8
ns
V us uC
Mechanical Data 5 5 160 Nm Nm g
Sirectifier
R
SII50N12
NPT IGBT Modules
Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C
450 W Ptot 350 300
100 µs
Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3
A
t = 14.0µs p
IC
10 2
250... |
| Document |
 SII50N12 Data Sheet
PDF 768.51KB |
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Desde 2024. D4U Semiconductor.
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