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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS se stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS haracteristic / Test Conditions / Part Number VGS = 0V BVDSS Drain – Source Breakdown Voltage ID = 250mA IDSS IGSS ID(ON) Zero Gate Voltage Drain Current (VGS = 0V) Gate – Source Leakage Current On State Drain Current 2 VDS = VDSS VDS = 0.8VDSS VGS = |
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Seme LAB |
Silicon Carbide N-Channel Power MOSFET d by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current b |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS ed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repet |
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Seme LAB |
SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE BRIDGE x. 2.2 2.7 100 1000 Units V Reverse Current µA DYNAMIC CHARACTERISTICS QC Total Capacitative Charge IF = 10A di/dt = 500A/µs VR = 600V TJ = 25°C 32 nC Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited reserves the right to change test condi |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS r either Source terminal. D G S StarMOS is a new generation of high voltage N –Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves fas |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS GS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Tem |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS r either Source terminal. D G S StarMOS is a new generation of high voltage N –Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves fas |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS either Source terminal. D G S StarMOS is a new generation of high voltage N –Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faste |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS se stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (R |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS GS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Tem |
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Seme Lab |
Standard Rectifier Diode Module otherwise stated) VRRM VR IFAV IFSM(surge) IFS(surge) PD TJ ,TSTG Peak Repetitive Reverse Voltage DC Reverse Blocking Voltage Average Forward Current @Tc = 85°C Repetitive Forward Current Non-Repetitive Forward Current(10msec pulse) Power Dissipation |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS sistance 2 (VGS =10V , ID = 0.5 ID [Cont.]) SML901R1AN / SML901R3AN (VGS = 0V , VDS = VDSS) (VGS = 0V , VDS = 0.8VDSS , TC = 125°C) (VGS = ±30V , VDS = 0V) SML1001R1AN / SML901R1AN SML1001R1AN / SML901R3AN 9.5 8.5 2 SML1001R1AN / SML901R1AN SML1001R3 |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS sistance 2 (VGS =10V , ID = 0.5 ID [Cont.]) SML901R1AN / SML901R3AN (VGS = 0V , VDS = VDSS) (VGS = 0V , VDS = 0.8VDSS , TC = 125°C) (VGS = ±30V , VDS = 0V) SML1001R1AN / SML901R1AN SML1001R1AN / SML901R3AN 9.5 8.5 2 SML1001R1AN / SML901R1AN SML1001R3 |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetit |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction T |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction T |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS th limited by maximum junction temperature. THERMAL CHARACTERISTICS Characteristic RGJC RGJA Junction to Case Junction to Ambient Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Min. |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS t Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 |
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Desde 2024. D4U Semiconductor.
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