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SML1001RHN |
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| Part Number | SML1001RHN |
| Manufacturer | Seme LAB |
| Description | SML1001RHN SML901RHN0 TO–258 Package Outline. Dimensions in mm (Inches) 17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 1.14 (0.707) 0.88 (0.035) 4TH GENERATION MOSFET N–CHANNEL ENHANCEMENT MOD... |
| Features |
haracteristic / Test Conditions / Part Number VGS = 0V BVDSS Drain – Source Breakdown Voltage ID = 250mA IDSS IGSS ID(ON) Zero Gate Voltage Drain Current (VGS = 0V) Gate – Source Leakage Current On State Drain Current 2 VDS = VDSS VDS = 0.8VDSS VGS = ±30V VGS = 10V VDS = VGS ID = 1.0mA VGS = 10V , ID = 0.5 ID [Cont.] TC = 125°C VDS = 0V 10 2 4 1.00 SML1001RHN SML901RHN Min. 1000 900 250 1000 ±100 Typ. Max. Unit V mA nA A V VDS > ID(ON) x RDS(ON) Max VGS(TH) Gate Threshold Voltage RDS(ON) Static Drain – Source On State Resistance 2 W 1) Repetitive Rating: Pulse Width limited by maximum jun... |
| Document |
 SML1001RHN Data Sheet
PDF 18.51KB |
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Desde 2024. D4U Semiconductor.
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