SML20J97 Seme LAB N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Datasheet. existencias, precio

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SML20J97

Seme LAB
SML20J97
SML20J97 SML20J97
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Part Number SML20J97
Manufacturer Seme LAB
Description SML20J97 SOT–227 Package Outline. Dimensions in mm (inches) 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 ...
Features either Source terminal. D G S StarMOS is a new generation of high voltage N
  –Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain
  – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate
  – Source Voltage Gate
  – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operat...

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