SML100J22 |
Part Number | SML100J22 |
Manufacturer | Seme LAB |
Description | SML100J22 SOT–227 Package Outline. Dimensions in mm (inches) 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0... |
Features |
r either Source terminal.
D
G S
StarMOS is a new generation of high voltage N –Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Oper... |
Document |
SML100J22 Data Sheet
PDF 23.24KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SML100J19 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
2 | SML100J34 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
3 | SML10016 |
Sanken electric |
(SML10016 / SML1016) 5phi Round Standard Bicolor LED | |
4 | SML1001R1AN |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
5 | SML1001R3AN |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
6 | SML1001RHN |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |