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Sanyo Semicon Device |
FTD2017M • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Drain common specifications. Specifications Absolute Maximum R |
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Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications • • • • Package Dimensions unit : mm 2155A [FTD1011] 0.65 0.425 Low ON-resistance. 2.5V drive. Mount height of 1.1mm. Composite type, facilitating high-density mounting. 8 5 0.5 4.5 6.4 0.95 3.0 1 0.25 4 (0.95) 0.125 1 : Drain1 2 : Source1 |
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Sanyo Semicon Device |
Load Switching Applications · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2013] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Absolute Maximum Ratings at Ta = 25˚C |
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Sanyo Semicon Device |
Load Switching Applications · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2019] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Absolute Maximum Ratings at Ta = 25˚C |
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Sanyo Semicon Device |
Load Switching Applications • • • • Package Dimensions unit : mm 2155A [FTD1012] 0.65 8 5 0.5 4.5 6.4 0.95 Low ON-resistance. 4V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 3.0 0.425 1 0.25 4 (0.95) 1.0 1 : Drain1 2 : Source1 3 : |
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Sanyo Semicon Device |
Load Switching Applications • • • • Package Dimensions unit : mm 2155A [FTD1014] 0.65 0.95 Low ON-resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 3.0 0.425 8 5 0.5 4.5 6.4 1 0.25 4 (0.95) 1 : Drain1 2 : Source1 3 : Sou |
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Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2005] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Absolute Maximum Ratings at Ta = 25˚C |
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Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications · Low ON resistance. · 4V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2007] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Specifications Absolute Maximum Ratings |
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Sanyo Semicon Device |
Load Switching Applications · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2011] 0.65 8 5 0.95 3.0 0.425 4.5 6.4 0.5 1 0.25 4 Absolute Maximum Ratings at Ta = 25˚C |
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Sanyo Semicon Device |
N CHANNEL MOS SILICON TRANSISTOR |
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Sanyo Semicon Device |
N- Channel Silicon MOS FET Load S/W USE • Low ON-state resistance. • 4V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissip |
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Sanyo Semicon Device |
Load Switching Applications · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2014] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 0.5 1 0.25 4 (0.95) 0.125 Absolute Maximum Ratings a |
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Sanyo Semicon Device |
Load Switching Applications · Low ON resistance. · 4V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2015] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Absolute Maximum Ratings at Ta = 25˚C Pa |
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Sanyo Semicon Device |
Load Switching Applications · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2017] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Absolute Maximum Ratings at Ta = 25˚C |
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Sanyo Semicon Device |
Load Switching Applications · Low ON resistance. · 4V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2022] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Absolute Maximum Ratings at Ta = 25˚C Pa |
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Sanyo |
Load Switching Applications • • • • N-Channel Silicon MOSFET Transistor Load Switching Applications Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-S |
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Sanyo Semiconductor Corporation |
N-Channel Silicon MOS FET • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Diss |
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Sanyo Semicon Device |
Load Switching · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD1003] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 0.5 1 0.25 4 (0.95) 0.125 Absolute Maximum Ratings a |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • • General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Ga |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • • General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate |
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Desde 2024. D4U Semiconductor.
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