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FTD1012 |
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| Part Number | FTD1012 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number : ENN7000 FTD1012 P-Channel Silicon MOSFET FTD1012 Load Switching Applications Features • • • • Package Dimensions unit : mm 2155A [FTD1012] 0.65 8 5 0.5 4.5 6.4 0.95 Low ON-res... |
| Features |
• • • • Package Dimensions unit : mm 2155A [FTD1012] 0.65 8 5 0.5 4.5 6.4 0.95 Low ON-resistance. 4V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 3.0 0.425 1 0.25 4 (0.95) 1.0 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 0.125 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT... |
| Document |
 FTD1012 Data Sheet
PDF 28.67KB |
Similar Datasheet
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| 2 | FTD1014 |
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Desde 2024. D4U Semiconductor.
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